IXFN73N30Q

MOSFET 73 Amps 300V 0.042 Rds

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IXFN73N30Q Picture
SeekIC No. : 00154059 Detail

IXFN73N30Q: MOSFET 73 Amps 300V 0.042 Rds

floor Price/Ceiling Price

Part Number:
IXFN73N30Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 300 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 73 A
Resistance Drain-Source RDS (on) : 0.045 Ohms Configuration : Single Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-227B Packaging : Tube    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Configuration : Single Dual Source
Continuous Drain Current : 73 A
Package / Case : SOT-227B
Drain-Source Breakdown Voltage : 300 V
Resistance Drain-Source RDS (on) : 0.045 Ohms


Features:

• IXYS advanced low Qg process
• Low gate charge and capacitances
   - easier to drive
   -faster switching
• Unclamped Inductive Switching (UIS) rated
• Low RDS (on)
• Fast intrinsic diode
• International standard package
• miniBLOC with Aluminium nitride isolation for low thermal resistance
• Low terminal inductance (<10 nH) and stray capacitance to heatsink (<35pf)
• Molding epoxies meet UL 94 V-0 flammability classification



Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls



Specifications

Symbol Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
300
300
    V
    V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
73
292
73
A
A
A
EAR
EAS
TC = 25°C

60
2.5

mJ
J

dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2 Ω

5

V/ns

PD TC = 25°C
500
W
TJ
TJM
Tstg
 
-55 ... +150
             150
-55 ... +150
°C
°C
°C
VISOL 50/60 Hz, RMS t = 1 min
IISOL 1 mA t = 1 s

2500
3000

V~
V~

Md Mounting torque
Terminal connection torque
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight

 

30
g



Parameters:

Technical/Catalog InformationIXFN73N30Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C73A
Rds On (Max) @ Id, Vgs45 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 5400pF @ 25V
Power - Max500W
PackagingTube
Gate Charge (Qg) @ Vgs195nC @ 10V
Package / CaseSOT-227B miniBLOC
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFN73N30Q
IXFN73N30Q



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