Features: • International standard package• Isolation voltage 3000V (RMS)• Low RDS (on) HDMOSTM processl• Rugged polysilicon gate cell structure• Low drain-to-case capacitance (<60 pF) - reduced RFI• Low package inductance (< 10 nH) -easy to drive and to p...
IXFN61N50: Features: • International standard package• Isolation voltage 3000V (RMS)• Low RDS (on) HDMOSTM processl• Rugged polysilicon gate cell structure• Low drain-to-case capa...
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Features: • International standard package• Encapsulating epoxy meets UL 94 V-0, flamm...
Features: • International standard package• Encapsulating epoxy meets UL 94 V-0, flamm...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Symbol | Test Conditions |
Maximum Ratings | ||
VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M |
500 500 |
V V | |
VGS VGEM |
Continuous Transient |
±20 ±30 |
V V | |
ID25 IDM |
TC = 25°C TC = 25°C (1) |
IXFN 58N50 IXFN 61N50 IXFN 58N50 IXFN 61N50 |
58 61 232 244 |
A A A A |
PD | TC = 25°C |
625 |
W | |
TJ |
-40 ... +150 150 -40 ... +150 |
°C °C °C °C | ||
VISOL | 50/60 Hz, RMS |
t = 1 minute t = 1s |
2500 3000 |
V~ V~ |
Md | Mounting torque Terminal connection torque (M4) |
1.5/13 1.5/13 |
Nm/lb.in. Nm/lb.in.. . | |
Weight |
30 |
g | ||
EAR |
|
75 |
mJ |