IXFN48N60P Selling Leads, Price trend , Ixys, IXFN48N60P DataSheet download, circuit diagram from SeekIC.com

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IXFN48N60P: MOSFET 600V 48A

IXFN48N60P Data Sheet

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Part Number:: IXFN48N60P
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Upload time: 2025/3/12

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	40 A
Resistance Drain-Source RDS (on) :	0.14 Ohms	Configuration :	Single Dual Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-227B	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 40 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Configuration : Single Dual Source
Package / Case : SOT-227B
Resistance Drain-Source RDS (on) : 0.14 Ohms

Parameters:

Technical/Catalog Information	IXFN48N60P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	40A
Rds On (Max) @ Id, Vgs	140 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	8860pF @ 25V
Power - Max	625W
Packaging	Tube
Gate Charge (Qg) @ Vgs	150nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN48N60P IXFN48N60P

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IXFN48N60P

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