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IXFN44N80P

MOSFET 36 Amps 800V

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SeekIC No. : 00153874 Detail

IXFN44N80P: MOSFET 36 Amps 800V

IXFN44N80P Data Sheet

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Part Number:
IXFN44N80P
Mfg:
Ixys
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 36 A
Resistance Drain-Source RDS (on) : 0.19 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-227B Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.19 Ohms
Continuous Drain Current : 36 A
Drain-Source Breakdown Voltage : 800 V
Package / Case : SOT-227B


Features:

• International standard package
• Encapsulating epoxy meets UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier


Application

• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays


Specifications

Symbol
Test Conditions
Maximum
Ratings
VCES
VCGR
 TJ = 25to 150
TJ = 25 to 150; RGE = 1 MΩ
800
800
V
V
VGES
VGEM
 Continuous
Transient
±30
±40
V
V
IC25
IDM
TC = 25
TC = 25, pulse width limited by TJM
39
100
A
A
IAR
EAR
EAS
TC = 25
TC = 25
TC = 25
22
80
3.4
A
mJ
J
dv/dt
I IDM, di/dt 100 A/s, V VDSS,
TJ 150, RG = 10
10
V/ns
PD
 TC = 25
694
W
TJ
TJM
Tstg
  
-55 ... +150
150
-55 ... +150


TL
1.6 mm (0.062 in.) from case for 10 s
300
VISOL
 50/60 Hz, RMS, 1 minute
IISOL < 1 mA, 10 seconds
2500
3000
V~
V~
Md
 Mounting torque
Terminal torque
1.13/10
1.13/10
Nm/lb.in.
Nm/lb.in.
Weight
30
g




Parameters:

Technical/Catalog InformationIXFN44N80P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C39A
Rds On (Max) @ Id, Vgs190 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 12000pF @ 25V
Power - Max694W
PackagingTube
Gate Charge (Qg) @ Vgs200nC @ 10V
Package / CaseSOT-227B miniBLOC
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFN44N80P
IXFN44N80P



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