IXFN44N50U2

MOSFET N-CH 500V 44A SOT-227B

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SeekIC No. : 004130758 Detail

IXFN44N50U2: MOSFET N-CH 500V 44A SOT-227B

floor Price/Ceiling Price

Part Number:
IXFN44N50U2
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Series: HiPerFET™ Manufacturer: IXYS
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25° C: 44A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 500mA, 10V Interface Type : Ethernet, I2C, SPI, UART, USB
Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) @ Vgs: 270nC @ 10V
Input Capacitance (Ciss) @ Vds: 8400pF @ 25V Power - Max: 520W
Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B    

Description

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Manufacturer: IXYS
Drain to Source Voltage (Vdss): 500V
Supplier Device Package: SOT-227B
Series: HiPerFET™
Current - Continuous Drain (Id) @ 25° C: 44A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) @ Vgs: 270nC @ 10V
Input Capacitance (Ciss) @ Vds: 8400pF @ 25V
Power - Max: 520W


Features:

· Popular Buck & Boost circuit topologies
· International standard package miniBLOC SOT-227B
· Aluminium nitride isolation
   - high power dissipation
· Isolation voltage 3000 V~
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Low drain-to-case capacitance (<60 pF)
    - reduced RFI
· Ultra-fast FRED diode with soft reverse recovery



Application

·Power factor controls and buck regulators
·DC servo and robotic drives
·DC choppers
·Switch reluctance motor controls



Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
44N50 44
48N50 48
44N50 176
48N50 192
A
A
A
A


EAR
EAS

TC = 25°C
TC = 25°C
24
30

mJ
J

dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2
5 V/ns
PD TC = 25°C 520 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
VISOL 50/60 Hz, RMS t = 1 min
IISOL 1 mA t = 1 s
2500
3000
V~
V~
Md
Mounting torque
Terminal connection torque
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight   30 g



Description

 


Parameters:

Technical/Catalog InformationIXFN44N50U2
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C44A
Rds On (Max) @ Id, Vgs120 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 8400pF @ 25V
Power - Max520W
PackagingTube
Gate Charge (Qg) @ Vgs270nC @ 10V
Package / CaseSOT-227B miniBLOC
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFN44N50U2
IXFN44N50U2



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