MOSFET 44 Amps 500V 0.12 Rds
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Features: • International standard package• Encapsulating epoxy meets UL 94 V-0, flamm...
Features: • International standard package• Encapsulating epoxy meets UL 94 V-0, flamm...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 44 A | ||
Resistance Drain-Source RDS (on) : | 0.12 Ohms | Configuration : | Single Dual Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-227B | Packaging : | Tube |
Symbol | Test Conditions | Maximum | Ratings |
VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M |
500 500 |
V V |
VGS VGSM |
Continuous Transient |
±20 ±30 |
V V |
ID25 IDM IAR |
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C |
44N50 44 48N50 48 44N50 176 48N50 192 |
A A A |
EAR |
TC = 25°C TC = 25°C |
48 60 2.5 |
A |
dv/dt | IS IDM, di/dt 100 A/s, VDD VDSS TJ 150°C, RG = 2 |
5 | V/ns |
PD | TC = 25°C | 500 | W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
TL | 1.6 mm (0.062 in.) from case for 10 s | 300 | °C |
Md |
Mounting torque Terminal connection torque |
1.5/13 1.5/13 |
Nm/lb.in. Nm/lb.in. |
Weight | 30 | g g |
Technical/Catalog Information | IXFN44N50Q |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Chassis Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25° C | 44A |
Rds On (Max) @ Id, Vgs | 120 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 7000pF @ 25V |
Power - Max | 500W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 190nC @ 10V |
Package / Case | SOT-227B miniBLOC |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXFN44N50Q IXFN44N50Q |