IXFN44N50Q

MOSFET 44 Amps 500V 0.12 Rds

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IXFN44N50Q Picture
SeekIC No. : 00159257 Detail

IXFN44N50Q: MOSFET 44 Amps 500V 0.12 Rds

floor Price/Ceiling Price

Part Number:
IXFN44N50Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 44 A
Resistance Drain-Source RDS (on) : 0.12 Ohms Configuration : Single Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-227B Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 44 A
Drain-Source Breakdown Voltage : 500 V
Configuration : Single Dual Source
Package / Case : SOT-227B
Resistance Drain-Source RDS (on) : 0.12 Ohms


Features:

• IXYS advanced low Qg process
• Low gate charge and capacitances
  - easier to drive
  - faster switching
• Unclamped Inductive Switching (UIS) rated
• Low RDS (on)
• Fast intrinsic diode
• International standard package
• miniBLOC with Aluminium nitride isolation for low thermal resistance
• Low terminal inductance (<10 nH) and stray capacitance to heatsink (<35pf)
• Molding epoxies meet UL 94 V-0 flammability classification



Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls



Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
44N50 44
48N50 48
44N50 176
48N50 192
A
A
A


EAR
EAS

TC = 25°C
TC = 25°C
48
60
2.5

A
mJ
J

dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2
5 V/ns
PD TC = 25°C 500 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md
Mounting torque
Terminal connection torque
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight   30 g
g



Parameters:

Technical/Catalog InformationIXFN44N50Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C44A
Rds On (Max) @ Id, Vgs120 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 7000pF @ 25V
Power - Max500W
PackagingTube
Gate Charge (Qg) @ Vgs190nC @ 10V
Package / CaseSOT-227B miniBLOC
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFN44N50Q
IXFN44N50Q



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