IXFN38N100Q2

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 38 A
Resistance Drain-Source RDS (on) : 0.25 Ohms
Configuration : Single Dual Source
Drain-Source Breakdown Voltage : 1000 V
Package / Case : SOT-227B


Features:

·Double metal process for low gate resistance
·miniBLOC, with Aluminium nitride isolation
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
·Fast intrinsic Rectifier


Application

·DC-DC converters
·Switched-mode and resonant-mode power supplies
·DC choppers
·Pulse generators


Specifications

Symbol	Test Conditions	Maximum	Ratings
VDSS VDGR	TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	1000 1000	V V
VGS VGSM	Continuous Transient	±30 ±40	V V
ID25 IDM IAR	TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C	38 152 38	A A A
EAR EAS	TC = 25°C TC= 25°C	60 5.0	mJ J
dv/dt	IS IDM, di/dt 100 A/µs, VDD VDSS TJ 150°C, RG = 2 Ω	20	V/ns
PD	TC = 25°C	890	W
TJ TJM Tstg		-55 ... +150 150 -55 ... +150	°C °C °C
TL	1.6 mm (0.063 in.) from case for 10 s	300	°C
Md	Mounting torque Terminal connection torque	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.
Weight		30	g

Parameters:

Technical/Catalog Information	IXFN38N100Q2
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	38A
Rds On (Max) @ Id, Vgs	250 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	7200pF @ 25V
Power - Max	890W
Packaging	Tube
Gate Charge (Qg) @ Vgs	250nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN38N100Q2 IXFN38N100Q2