IXFN34N100

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 34 A
Configuration : Single Dual Source
Drain-Source Breakdown Voltage : 1000 V
Package / Case : SOT-227B
Resistance Drain-Source RDS (on) : 0.28 Ohms


Features:

·International standard packages
·miniBLOC, with Aluminium nitride isolation
·Low R_{DS (on)} HDMOS^TM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
·Fast intrinsic Rectifier


Application

· DC-DC converters
· Battery chargers
· Switched-mode and resonant-mode power supplies
· DC choppers
· Temperature and lighting controls


Specifications

Symbol	Test Conditions	Maximum	Ratings
VDSS VDGR	TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M	1000 1000	V V
VGS VGSM	Continuous Transient	±20 ±30	V V
ID25 IDM IAR	TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C	34 136 34	A A A
EAR EAS	TC = 25°C TC = 25°C	64 4	mJ J
dv/dt	IS IDM, di/dt 100 A/s, VDD VDSS TJ 150°C, RG = 2	5	V/ns
PD	TC = 25°C	700	W
TJ TJM Tstg		-55 ... +150 150 -55 ... +150	°C °C °C
TJ	1.6 mm (0.63 in) from case for 10 s	-	C
VISOL	50/60 Hz, RMS t = 1 min IISOL 1 mA t = 1 s	2500 3000	V~ V~
Md	Mounting torque Terminal connection torque	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.
Weight		30	g g

Parameters:

Technical/Catalog Information	IXFN34N100
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	34A
Rds On (Max) @ Id, Vgs	280 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	9200pF @ 25V
Power - Max	700W
Packaging	Tube
Gate Charge (Qg) @ Vgs	380nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN34N100 IXFN34N100