IXFN340N06

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Configuration : Single Dual Source
Package / Case : SOT-227B
Resistance Drain-Source RDS (on) : 0.003 Ohms
Continuous Drain Current : 340 A


Features:

·International standard packages
·miniBLOC, with Aluminium nitride isolation
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
·Fast intrinsic Rectifier


Application

· DC-DC converters
· Battery chargers
· Switched-mode and resonant-mode power supplies
· DC choppers
· Temperature and lighting controls


Specifications

Symbol	Test Conditions	Maximum	Ratings
VDSS VDGR	TJ = 25 to 150 TJ = 25 to 150; RGS = 1 M	60 60	V V
VGS VGSM	Continuous Transient	±20 ±30	V V
ID25 IL(RMS) IDM IAR	TC = 25, Chip capability Terminal current limit TC = 25, pulse width limited by TJM TC = 25	340 100 1360 200	A A A A
EAR	TC = 25	64	mJ
EAS	TC = 25	4	J
dv/dt	IS IDM, di/dt 100 As, VDD VDSS, TJ 150, RG = 2	5	V/ns
PD	TC = 25	700	W
TJ TJM Tstg		-55 ... +150 150 -55 ... +150
VISOL	50/60 Hz, RMS t = 1 min IISOL 1 mA t = 1 s	2500 3000	V~ V~
Md	Mounting torque Terminal connection torque	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.
Weight		30	g

Parameters:

Technical/Catalog Information	IXFN340N06
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	340A
Rds On (Max) @ Id, Vgs	3 mOhm @ 100A, 10V
Input Capacitance (Ciss) @ Vds	16800pF @ 25V
Power - Max	700W
Packaging	Tube
Gate Charge (Qg) @ Vgs	600nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN340N06 IXFN340N06