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IXFN32N80P: MOSFET 29 Amps 800V 0.27 Rds

IXFN32N80P Data Sheet

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Part Number:: IXFN32N80P
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/11/21

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	800 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	29 A
Resistance Drain-Source RDS (on) :	0.27 Ohms	Configuration :	Single Dual Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-227B	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 29 A
Drain-Source Breakdown Voltage : 800 V
Configuration : Single Dual Source
Resistance Drain-Source RDS (on) : 0.27 Ohms
Package / Case : SOT-227B

Parameters:

Technical/Catalog Information	IXFN32N80P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	29A
Rds On (Max) @ Id, Vgs	270 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	8820nF @ 25V
Power - Max	625W
Packaging	Tube
Gate Charge (Qg) @ Vgs	150nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN32N80P IXFN32N80P

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IXFN32N80P

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