IXFN32N120 Selling Leads, Price trend , Ixys, IXFN32N120 DataSheet download, circuit diagram from SeekIC.com

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IXFN32N120: MOSFET 32 Amps 1200V 0.550 Rds

IXFN32N120 Data Sheet

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Part Number:: IXFN32N120
Mfg:: Ixys
Supply Ability:: 5000

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	1200 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	32 A
Resistance Drain-Source RDS (on) :	0.35 Ohms	Configuration :	Single Dual Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-227B	Packaging :	Box

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 32 A
Drain-Source Breakdown Voltage : 1200 V
Configuration : Single Dual Source
Package / Case : SOT-227B
Resistance Drain-Source RDS (on) : 0.35 Ohms
Packaging : Box

Parameters:

Technical/Catalog Information	IXFN32N120
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C	32A
Rds On (Max) @ Id, Vgs	350 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	15900pF @ 25V
Power - Max	780W
Packaging	Tube
Gate Charge (Qg) @ Vgs	400nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN32N120 IXFN32N120

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IXFN32N120

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