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IXFN30N110P: MOSFET 30 Amps 1100V 0.3600 Rds

IXFN30N110P Data Sheet

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Part Number:: IXFN30N110P
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/12/21

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	1100 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	25 A
Resistance Drain-Source RDS (on) :	0.36 Ohms	Configuration :	Single Dual Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-227B	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 0.36 Ohms
Configuration : Single Dual Source
Package / Case : SOT-227B
Drain-Source Breakdown Voltage : 1100 V

Parameters:

Technical/Catalog Information	IXFN30N110P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1100V (1.1kV)
Current - Continuous Drain (Id) @ 25° C	25A
Rds On (Max) @ Id, Vgs	360 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	13600pF @ 25V
Power - Max	695W
Packaging	Tube
Gate Charge (Qg) @ Vgs	235nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN30N110P IXFN30N110P

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IXFN30N110P

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