IXFN26N90

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 900 V
Resistance Drain-Source RDS (on) : 0.3 Ohms
Configuration : Single Dual Source
Package / Case : SOT-227B
Continuous Drain Current : 26 A


Features:

• International standard package
• miniBLOC, with Aluminium nitride isolation
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier


Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls


Specifications

Symbol	Test Conditions	Maximum	Ratings
VDSS VDGR	TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M	500 500	V V
VGS VGSM	Continuous Transient	±20 ±30	V V
ID25 IDM IAR	TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C	26N90 26 25N90 25 26N90 104 25N90 100 26N90 26 25N90 25	A A A
EAR EAS	TC = 25°C TC = 25°C	64 3	mJ J
dv/dt	IS IDM, di/dt 100 A/s, VDD VDSS TJ 150°C, RG = 2	5	V/ns
PD	TC = 25°C	600	W
TJ TJM Tstg		-55 ... +150 150 -55 ... +150	°C °C °C
TJ	1.6 mm (0.63 in) from case for 10 s	-	°C
VISOL	50/60 Hz, RMS t = 1 min IISOL 1 mA t = 1 s	2500 3000	V~ V~
Md	Mounting torque Terminal connection torque	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.
Weight		30	g g

Parameters:

Technical/Catalog Information	IXFN26N90
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	26A
Rds On (Max) @ Id, Vgs	300 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	10800pF @ 25V
Power - Max	600W
Packaging	Tube
Gate Charge (Qg) @ Vgs	240nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN26N90 IXFN26N90