IXFN23N100 Selling Leads, Price trend , Ixys, IXFN23N100 DataSheet download, circuit diagram from SeekIC.com

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IXFN23N100: MOSFET 23 Amps 1000V 0.43 Rds

IXFN23N100 Data Sheet

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Part Number:: IXFN23N100
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	1000 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	24 A
Resistance Drain-Source RDS (on) :	0.39 Ohms	Configuration :	Single Dual Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-227B	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 24 A
Configuration : Single Dual Source
Drain-Source Breakdown Voltage : 1000 V
Package / Case : SOT-227B
Resistance Drain-Source RDS (on) : 0.39 Ohms

Parameters:

Technical/Catalog Information	IXFN23N100
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	23A
Rds On (Max) @ Id, Vgs	-
Input Capacitance (Ciss) @ Vds	-
Power - Max	595W
Packaging	Tube
Gate Charge (Qg) @ Vgs	-
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN23N100 IXFN23N100

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IXFN23N100

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