IXFN230N10

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.0065 Ohms
Configuration : Single Dual Source
Package / Case : SOT-227B
Continuous Drain Current : 230 A


Features:

·International standard packages
·miniBLOC, with Aluminium nitride isolation
·Low R_{DS (on)} HDMOS^TM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
·Fast intrinsic Rectifier


Application

·DC-DC converters
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·Temperature and lighting controls


Specifications

Symbol	Test Conditions	Maximum	Ratings
VDSS VDGR	TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	100 100	V V
VGS VGSM	Continuous Transient	±20 ±30	V V
ID25 IL(RMS) IDM IAR	TC = 25°C Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C	230 100 920 150	A A A A
EAR EAS	TC = 25°C TC= 25°C	64 4	mJ J
dv/dt	IS IDM, di/dt 100 A/µs, VDD VDSS TJ 150°C, RG = 2 Ω	5	V/ns
PD	TC = 25°C	700	W
TJ TJM Tstg		-55 ... +150 150 -55 ... +150	°C °C °C
VISOL	50/60 Hz, RMS t = 1 min IISOL 1 mA t = 1 s	2500 3000	V~ V~
Md	Mounting torque Terminal connection torque	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.
Weight		30	g

Parameters:

Technical/Catalog Information	IXFN230N10
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	230A
Rds On (Max) @ Id, Vgs	6 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	21000pF @ 25V
Power - Max	700W
Packaging	Tube
Gate Charge (Qg) @ Vgs	690nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN230N10 IXFN230N10