IXFN21N100Q

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 21 A
Configuration : Single Dual Source
Drain-Source Breakdown Voltage : 1000 V
Package / Case : SOT-227B
Resistance Drain-Source RDS (on) : 0.5 Ohms


Features:

• IXYS advanced low Q_g process
• Low gate charge and capacitances
- easier to drive
-faster switching
• Unclamped Inductive Switching (UIS) rated
• Low R _{DS (on)}
• Fast intrinsic diode
• International standard package
• miniBLOC with Aluminium nitride isolation for low thermal resistance
• Low terminal inductance (<10 nH) and stray capacitance to heatsink (<35pf)
• Molding epoxies meet UL 94 V-0 flammability classification


Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls


Parameters:

Technical/Catalog Information	IXFN21N100Q
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	21A
Rds On (Max) @ Id, Vgs	500 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	5900pF @ 25V
Power - Max	520W
Packaging	Tube
Gate Charge (Qg) @ Vgs	170nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN21N100Q IXFN21N100Q