IXFN20N120P Selling Leads, Price trend , Ixys, IXFN20N120P DataSheet download, circuit diagram from SeekIC.com

See larger image

SeekIC No. : 00158294 Detail

IXFN20N120P: MOSFET 20 Amps 1200V 0.6 Rds

IXFN20N120P Data Sheet

Get Latest Price

Part Number:: IXFN20N120P
Mfg:: Ixys
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

IXFN 23N100 evaluate
Features: • International standard package• Encapsulating epoxy meets UL 94 V-0, flamm...
IXFN 24N100 evaluate
Features: • International standard package• Encapsulating epoxy meets UL 94 V-0, flamm...
IXFN 24N100F evaluate
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	1200 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	20 A
Resistance Drain-Source RDS (on) :	0.57 Ohms	Configuration :	Single Dual Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-227B	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 1200 V
Configuration : Single Dual Source
Package / Case : SOT-227B
Resistance Drain-Source RDS (on) : 0.57 Ohms

Parameters:

Technical/Catalog Information	IXFN20N120P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	570 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	11100pF @ 25V
Power - Max	595W
Packaging	Tube
Gate Charge (Qg) @ Vgs	193nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN20N120P IXFN20N120P

Customers Who Bought This Item Also Bought

IXFN100N20 HiPerFET Power MOSFETs
US $$1.64 - 1.66 / Piece

Supply Ability:2000Week

View details
IXFN100N20 Trans MOSFET N-CH 200V 100A 4-Pin SOT-227B
US $$8.60 - 12.50 / Piece

Supply Ability:321Week

View details
IXFN100N50P
US $$18.00 - 30.00 / Piece

Supply Ability:10000Week

View details
IXFN100N50P
US $$10.00 - 14.00 / Piece

Supply Ability:1Day

View details
IXFN100N50P Trans MOSFET N-CH 500V 90A 4-Pin SOT-227B
US $$8.60 - 12.60 / Piece

Supply Ability:243Week

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

IXFN20N120P

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Quick Details

Description

Customers Who Bought This Item Also Bought

Cable Assemblies(5)

Relays(6300)

Discrete Semiconductor Products(7459)

Cables, Wires - Management(4448)

Audio Products(940)

Prototyping Products(332)