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IXFN200N10P: MOSFET 200 Amps 100V 0.0075 Rds

IXFN200N10P Data Sheet

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Part Number:: IXFN200N10P
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/11/23

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	200 A
Resistance Drain-Source RDS (on) :	0.0075 Ohms	Configuration :	Single Dual Source
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-227B	Packaging :	Box

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Configuration : Single Dual Source
Package / Case : SOT-227B
Continuous Drain Current : 200 A
Resistance Drain-Source RDS (on) : 0.0075 Ohms
Packaging : Box

Parameters:

Technical/Catalog Information	IXFN200N10P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	200A
Rds On (Max) @ Id, Vgs	7.5 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	7600pF @ 25V
Power - Max	680W
Packaging	Tube
Gate Charge (Qg) @ Vgs	235nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN200N10P IXFN200N10P

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IXFN200N10P

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