Features: • International standard packages• miniBLOC with Aluminium nitride isolation• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Unclamped Inductive Switching (UIS) rated• Low package inductance• Fast intrinsic RectifierApplica...
IXFN200N06: Features: • International standard packages• miniBLOC with Aluminium nitride isolation• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Unclamped ...
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Features: • International standard package• Encapsulating epoxy meets UL 94 V-0, flamm...
Features: • International standard package• Encapsulating epoxy meets UL 94 V-0, flamm...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Symbol | Test Conditions | Maximum | Ratings |
VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M |
N07 70 N06 60 N07 70 N06 60 |
V V V V |
VGS VGSM |
Continuous Transient |
±20 ±30 |
V V |
ID25 IDM IAR |
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C |
200 180 100 |
A A A |
EAR |
TC = 25°C TC = 25°C |
30 2 |
mJ |
dv/dt | IS IDM, di/dt 100 A/s, VDD VDSS TJ 150°C, RG = 2 |
5 | V/ns |
PD | TC = 25°C | 520 | W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
VISOL | 50/60 Hz, RMS t = 1 min IISOL 1 mA t = 1 s |
2500 3000 |
V~ V~ |
Md |
Mounting torque Terminal connection torque |
1.5/13 1.5/13 |
Nm/lb.in. Nm/lb.in. |
Weight | 30 | g |