IXFN180N07

MOSFET 180 Amps 70V 0.007 Rds

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IXFN180N07 Picture
SeekIC No. : 00159204 Detail

IXFN180N07: MOSFET 180 Amps 70V 0.007 Rds

floor Price/Ceiling Price

Part Number:
IXFN180N07
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/8/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 70 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 180 A
Resistance Drain-Source RDS (on) : 0.006 Ohms Configuration : Single Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-227B Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 180 A
Configuration : Single Dual Source
Package / Case : SOT-227B
Resistance Drain-Source RDS (on) : 0.006 Ohms
Drain-Source Breakdown Voltage : 70 V


Features:

• International standard packages
• miniBLOC with Aluminium nitride isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier



Application

• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays



Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
N07 70
N06 60
N07 70
N06 60
V
V
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
200
180
100
A
A
A


EAR
EAS

TC = 25°C
TC = 25°C
30
2

mJ
J

dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2
5 V/ns
PD TC = 25°C 520 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
VISOL 50/60 Hz, RMS t = 1 min
IISOL 1 mA t = 1 s
2500
3000
V~
V~
Md
Mounting torque
Terminal connection torque
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight   30 g



Parameters:

Technical/Catalog InformationIXFN180N07
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)70V
Current - Continuous Drain (Id) @ 25° C180A
Rds On (Max) @ Id, Vgs7 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 9000pF @ 25V
Power - Max520W
PackagingTube
Gate Charge (Qg) @ Vgs480nC @ 10V
Package / CaseSOT-227B miniBLOC
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFN180N07
IXFN180N07



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