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IXFN170N30P: MOSFET 138 Amps 300V 0.018 Rds

IXFN170N30P Data Sheet

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Part Number:: IXFN170N30P
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/11/23

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	300 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	138 A
Resistance Drain-Source RDS (on) :	18 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-227-B	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 18 mOhms
Drain-Source Breakdown Voltage : 300 V
Continuous Drain Current : 138 A
Package / Case : SOT-227-B

Parameters:

Technical/Catalog Information	IXFN170N30P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	138A
Rds On (Max) @ Id, Vgs	18 mOhm @ 85A, 10V
Input Capacitance (Ciss) @ Vds	20000pF @ 25V
Power - Max	890W
Packaging	Tube
Gate Charge (Qg) @ Vgs	258nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN170N30P IXFN170N30P

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IXFN170N30P

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