IXFN170N10

MOSFET 170 Amps 100V

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IXFN170N10 Picture
SeekIC No. : 00159291 Detail

IXFN170N10: MOSFET 170 Amps 100V

floor Price/Ceiling Price

Part Number:
IXFN170N10
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 170 A
Resistance Drain-Source RDS (on) : 0.01 Ohms Configuration : Single Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-227B Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Dual Source
Package / Case : SOT-227B
Continuous Drain Current : 170 A
Resistance Drain-Source RDS (on) : 0.01 Ohms


Features:

·International standard packages
·Encapsulating epoxy meets UL 94 V-0, flammability classification
·miniBLOC with Aluminium nitride isolation
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
·Fast intrinsic Rectifier



Application

·DC-DC converters
·Synchronous rectification
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·Temperature and lighting controls
·Low voltage relays



Specifications

Symbol Test Conditions IXFK
170N10
IXFN
170N10
Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C
100
100
100
100
V
V
VGS
VGSM
Continuous
Transient
±20
±30
±20
±30
V
V
ID25
ID25
IDM
IAR
TC = 25°C
TC = 25°C
TC = 25°C
TC = 25°C
170
76
680
170
170
NA
680
170
A
A
A


EAR
TC = 25°C 60 60
mJ
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2
5 5 V/ns
PD TC = 25°C 560 600 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
VISOL 50/60 Hz, RMS t = 1 min
IISOL 1 mA t = 1 s
N/A
N/A
2500
3000
V~
V~
Md
Mounting torque
Terminal connection torque
0.9/6
N/A
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight   10 30 g



Parameters:

Technical/Catalog InformationIXFN170N10
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C170A
Rds On (Max) @ Id, Vgs10 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 10300pF @ 25V
Power - Max600W
PackagingTube
Gate Charge (Qg) @ Vgs515nC @ 10V
Package / CaseSOT-227B miniBLOC
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFN170N10
IXFN170N10



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