IXFN150N10

MOSFET 150 Amps 100V

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SeekIC No. : 00164484 Detail

IXFN150N10: MOSFET 150 Amps 100V

floor Price/Ceiling Price

Part Number:
IXFN150N10
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 150 A
Resistance Drain-Source RDS (on) : 0.012 Ohms Configuration : Single Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-227B Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Dual Source
Resistance Drain-Source RDS (on) : 0.012 Ohms
Package / Case : SOT-227B
Continuous Drain Current : 150 A


Features:

· International standard packages
· JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification
· miniBLOC with Aluminium nitride isolation
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS) rated
· Low package inductance
· Fast intrinsic Rectifier



Application

· DC-DC converters
· Synchronous rectification
· Battery chargers
· Switched-mode and resonant-mode power supplies
· DC choppers
· Temperature and lighting controls
· Low voltage relays



Specifications

Symbol Test Conditions IXFK IXFN Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
100
100
100
100
V
V
VGS
VGSM
Continuous
Transient
±20
±30
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
100
76
560
75
150
-
560
75
A
A
A
A


EAR
EAS

TC = 25°C
TC = 25°C
30 30

mJ

dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2
5 5 V/ns
PD TC = 25°C 500 520 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
VISOL 50/60 Hz, RMS t = 1 min
IISOL1 mA t = 1 s
-
-
2500
3000
V~
V~
Md
Mounting torque
Terminal connection torque
0.9/6
-
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight   10 30 g




Parameters:

Technical/Catalog InformationIXFN150N10
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C150A
Rds On (Max) @ Id, Vgs12 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 9000pF @ 25V
Power - Max520W
PackagingBulk
Gate Charge (Qg) @ Vgs360nC @ 10V
Package / CaseSOT-227B miniBLOC
FET FeatureStandard
Drawing Number*
Lead Free StatusRequest Inventory Verification
RoHS StatusRequest Inventory Verification
Other Names IXFN150N10
IXFN150N10



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