IXFN140N20P Selling Leads, Price trend , Ixys, IXFN140N20P DataSheet download, circuit diagram from SeekIC.com

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IXFN140N20P: MOSFET 140 Amps 200V 0.018 Rds

IXFN140N20P Data Sheet

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Part Number:: IXFN140N20P
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/12/25

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	115 A
Resistance Drain-Source RDS (on) :	0.018 Ohms	Configuration :	Single Dual Source
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-227B	Packaging :	Box

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 200 V
Configuration : Single Dual Source
Resistance Drain-Source RDS (on) : 0.018 Ohms
Package / Case : SOT-227B
Packaging : Box
Continuous Drain Current : 115 A

Parameters:

Technical/Catalog Information	IXFN140N20P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	115A
Rds On (Max) @ Id, Vgs	18 mOhm @ 70A, 10V
Input Capacitance (Ciss) @ Vds	7500pF @ 25V
Power - Max	680W
Packaging	Tube
Gate Charge (Qg) @ Vgs	240nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN140N20P IXFN140N20P

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IXFN140N20P

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