IXFN130N30 Selling Leads, Price trend , Ixys, IXFN130N30 DataSheet download, circuit diagram from SeekIC.com

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IXFN130N30: MOSFET 300V 130A

IXFN130N30 Data Sheet

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Part Number:: IXFN130N30
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/11/14

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	300 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	130 A
Resistance Drain-Source RDS (on) :	0.022 Ohms	Configuration :	Single Dual Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-227B	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 130 A
Configuration : Single Dual Source
Package / Case : SOT-227B
Drain-Source Breakdown Voltage : 300 V
Resistance Drain-Source RDS (on) : 0.022 Ohms

Parameters:

Technical/Catalog Information	IXFN130N30
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	130A
Rds On (Max) @ Id, Vgs	22 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	14500pF @ 25V
Power - Max	700W
Packaging	Tube
Gate Charge (Qg) @ Vgs	380nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN130N30 IXFN130N30

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IXFN130N30

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