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IXFN100N50P: MOSFET 500V 100A

IXFN100N50P Data Sheet

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Part Number:: IXFN100N50P
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Upload time: 2024/12/25

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	500 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	90 A
Resistance Drain-Source RDS (on) :	0.049 Ohms	Configuration :	Single Dual Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-227B	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Continuous Drain Current : 90 A
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Configuration : Single Dual Source
Package / Case : SOT-227B
Resistance Drain-Source RDS (on) : 0.049 Ohms

Parameters:

Technical/Catalog Information	IXFN100N50P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	90A
Rds On (Max) @ Id, Vgs	49 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds	20000pF @ 25V
Power - Max	1040W
Packaging	Tube
Gate Charge (Qg) @ Vgs	240nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Other Names	IXFN100N50P IXFN100N50P

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IXFN100N50P

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