MOSFET 500V 100A
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • International standard package• Encapsulating epoxy meets UL 94 V-0, flamm...
Features: • International standard package• Encapsulating epoxy meets UL 94 V-0, flamm...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 90 A | ||
Resistance Drain-Source RDS (on) : | 0.049 Ohms | Configuration : | Single Dual Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-227B | Packaging : | Tube |
Technical/Catalog Information | IXFN100N50P |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Chassis Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25° C | 90A |
Rds On (Max) @ Id, Vgs | 49 mOhm @ 50A, 10V |
Input Capacitance (Ciss) @ Vds | 20000pF @ 25V |
Power - Max | 1040W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 240nC @ 10V |
Package / Case | SOT-227B miniBLOC |
FET Feature | Standard |
Other Names | IXFN100N50P IXFN100N50P |