IXFN100N20

MOSFET 100 Amps 200V 0.023 Rds

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IXFN100N20 Picture
SeekIC No. : 00159124 Detail

IXFN100N20: MOSFET 100 Amps 200V 0.023 Rds

floor Price/Ceiling Price

Part Number:
IXFN100N20
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 0.023 Ohms Configuration : Single Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-227B Packaging : Box    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 100 A
Drain-Source Breakdown Voltage : 200 V
Resistance Drain-Source RDS (on) : 0.023 Ohms
Configuration : Single Dual Source
Package / Case : SOT-227B
Packaging : Box


Features:

 International standard packages
 JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification
 miniBLOC with Aluminium nitride isolation
 Low RDS (on) HDMOSTM process
 Rugged polysilicon gate cell structure
 Unclamped Inductive Switching (UIS) rated
 Low package inductance
 Fast intrinsic Rectifier



Application

 DC-DC converters
 Synchronous rectification
 Battery chargers
 Switched-mode and resonant-mode power supplies
 DC choppers
 Temperature and lighting controls
 Low voltage relays



Specifications

Symbol Test Conditions
Maximum Ratings
IXFK
IXFN
IXFN
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
90N20
200
200
100N20
200
200
106N20
200 V
200 V
VGS
VGEM
Continuous
Transient
±20
±30
±20
±30
20 V
20 V
ID25
ID80
IDM
TC = 25oC, Chip capability
TC = 80oC, limited by external leads
TC = 25oC, pulse width limited by TJM
90
76
360
100
-
400
106 A
A
424 A
IAR TC = 25°C
50

50

A

EAR
dv/dt
TC = 25oC
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2 Ω
30
5

30
5

30 mJ
5 V/ns

PD TC = 25°C
500
520
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
VISOL 50/60 Hz, RMS t = 1 min
IISOL 1 mA t = 1 s
-
-

2500
3000

V~
V~

Md Mounting torque
Terminal connection torque
0.9/6
-
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight

10
30
g



Parameters:

Technical/Catalog InformationIXFN100N20
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs23 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 9000pF @ 25V
Power - Max520W
PackagingTube
Gate Charge (Qg) @ Vgs380nC @ 10V
Package / CaseSOT-227B miniBLOC
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFN100N20
IXFN100N20



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