MOSFET N-CH 100V 100A SOT-227B
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Features: • International standard package• Encapsulating epoxy meets UL 94 V-0, flamm...
Features: • International standard package• Encapsulating epoxy meets UL 94 V-0, flamm...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Series: | HiPerFET™ | Manufacturer: | IXYS |
FET Type: | MOSFET N-Channel, Metal Oxide | FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 100V | Current - Continuous Drain (Id) @ 25° C: | 100A |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 500mA, 10V | Interface Type : | Ethernet, I2C, SPI, UART, USB |
Vgs(th) (Max) @ Id: | 4V @ 4mA | Gate Charge (Qg) @ Vgs: | 180nC @ 10V |
Input Capacitance (Ciss) @ Vds: | 4500pF @ 25V | Power - Max: | 360W |
Mounting Type: | Chassis Mount | Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
Technical/Catalog Information | IXFN100N10S2 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Chassis Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 100A |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 4500pF @ 25V |
Power - Max | 360W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 180nC @ 10V |
Package / Case | SOT-227B miniBLOC |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXFN100N10S2 IXFN100N10S2 |