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IXFL82N60P

MOSFET 82 Amps 600V 0.78 Ohm Rds

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SeekIC No. : 00158279 Detail

IXFL82N60P: MOSFET 82 Amps 600V 0.78 Ohm Rds

IXFL82N60P Data Sheet

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Part Number:
IXFL82N60P
Mfg:
Ixys
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 54 A
Resistance Drain-Source RDS (on) : 0.08 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 264 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 54 A
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.08 Ohms
Package / Case : ISOPLUS 264


Parameters:

Technical/Catalog InformationIXFL82N60P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C55A
Rds On (Max) @ Id, Vgs78 mOhm @ 41A, 10V
Input Capacitance (Ciss) @ Vds 23000pF @ 25V
Power - Max625W
PackagingTube
Gate Charge (Qg) @ Vgs240nC @ 10V
Package / CaseISOPLUS264?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFL82N60P
IXFL82N60P



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