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IXFL100N50P

MOSFET tbd Amps 500V 0.06 Ohms Rds

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SeekIC No. : 00158287 Detail

IXFL100N50P: MOSFET tbd Amps 500V 0.06 Ohms Rds

IXFL100N50P Data Sheet

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Part Number:
IXFL100N50P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 70 A
Resistance Drain-Source RDS (on) : 0.052 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 264 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 70 A
Resistance Drain-Source RDS (on) : 0.052 Ohms
Package / Case : ISOPLUS 264


Parameters:

Technical/Catalog InformationIXFL100N50P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C70A
Rds On (Max) @ Id, Vgs52 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 20000pF @ 25V
Power - Max625W
PackagingTube
Gate Charge (Qg) @ Vgs240nC @ 10V
Package / CaseISOPLUS264?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFL100N50P
IXFL100N50P



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