MOSFET 32 Amps 1200V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 1200 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 24 A | ||
Resistance Drain-Source RDS (on) : | 0.34 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | ISOPLUS i5-Pak | Packaging : | Tube |
Technical/Catalog Information | IXFL32N120P |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25° C | 24A |
Rds On (Max) @ Id, Vgs | 340 mOhm @ 16A, 10V |
Input Capacitance (Ciss) @ Vds | 21000pF @ 25V |
Power - Max | 520W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 360nC @ 10V |
Package / Case | ISOPLUSi5-Pak? |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXFL32N120P IXFL32N120P |