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IXFL40N110P

MOSFET 40 Amps 1100V 0.2800 Rds

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SeekIC No. : 00158199 Detail

IXFL40N110P: MOSFET 40 Amps 1100V 0.2800 Rds

IXFL40N110P Data Sheet

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Part Number:
IXFL40N110P
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1100 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 0.28 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Package / Case : i5-Pak
Packaging : Tube    

Description

Mounting Style :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 0.28 Ohms
Drain-Source Breakdown Voltage : 1100 V
Package / Case : i5-Pak


Parameters:

Technical/Catalog InformationIXFL40N110P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1100V (1.1kV)
Current - Continuous Drain (Id) @ 25° C21A
Rds On (Max) @ Id, Vgs-
Input Capacitance (Ciss) @ Vds -
Power - Max-
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / Case*
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFL40N110P
IXFL40N110P



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