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IXFL39N90

MOSFET 39 Amps 900V 0.22W Rds

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SeekIC No. : 00158196 Detail

IXFL39N90: MOSFET 39 Amps 900V 0.22W Rds

IXFL39N90 Data Sheet

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Part Number:
IXFL39N90
Mfg:
Ixys
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 900 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 34 A
Resistance Drain-Source RDS (on) : 0.22 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 264 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.22 Ohms
Drain-Source Breakdown Voltage : 900 V
Continuous Drain Current : 34 A
Package / Case : ISOPLUS 264


Parameters:

Technical/Catalog InformationIXFL39N90
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25° C34A
Rds On (Max) @ Id, Vgs220 mOhm @ 19.5A, 10V
Input Capacitance (Ciss) @ Vds 13400pF @ 25V
Power - Max580W
PackagingTube
Gate Charge (Qg) @ Vgs375nC @ 10V
Package / CaseISOPLUS264?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFL39N90
IXFL39N90



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