IXFE36N100

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Continuous Drain Current : 33 A
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Dual Source
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 0.24 Ohms
Package / Case : ISOPLUS 227


Features:

•Conforms to SOT-227B outline
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS) rated
•Low package inductance
•Fast intrinsic Rectifier


Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls


Parameters:

Technical/Catalog Information	IXFE36N100
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	33A
Rds On (Max) @ Id, Vgs	240 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	15000pF @ 25V
Power - Max	580W
Packaging	Tube
Gate Charge (Qg) @ Vgs	455nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFE36N100 IXFE36N100