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IXFE23N100

MOSFET 21 Amps 1000V 0.43 Rds

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SeekIC No. : 00154116 Detail

IXFE23N100: MOSFET 21 Amps 1000V 0.43 Rds

IXFE23N100 Data Sheet

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Part Number:
IXFE23N100
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 0.43 Ohms Configuration : Single Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 227 Packaging : Box    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 0.43 Ohms
Continuous Drain Current : 21 A
Configuration : Single Dual Source
Drain-Source Breakdown Voltage : 1000 V
Packaging : Box
Package / Case : ISOPLUS 227


Parameters:

Technical/Catalog InformationIXFE23N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C21A
Rds On (Max) @ Id, Vgs430 mOhm @ 11.5A, 10V
Input Capacitance (Ciss) @ Vds 7000pF @ 25V
Power - Max500W
PackagingBulk
Gate Charge (Qg) @ Vgs250nC @ 10V
Package / CaseSOT-227B miniBLOC
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFE23N100
IXFE23N100



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