IXFE180N20 Selling Leads, Price trend , Ixys, IXFE180N20 DataSheet download, circuit diagram from SeekIC.com

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IXFE180N20: MOSFET 180 Amps 200V 0.01 Rds

IXFE180N20 Data Sheet

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Part Number:: IXFE180N20
Mfg:: Ixys
Supply Ability:: 5000

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	158 A
Resistance Drain-Source RDS (on) :	0.012 Ohms	Configuration :	Single Dual Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	ISOPLUS 227	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Configuration : Single Dual Source
Resistance Drain-Source RDS (on) : 0.012 Ohms
Package / Case : ISOPLUS 227
Continuous Drain Current : 158 A

Parameters:

Technical/Catalog Information	IXFE180N20
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	158A
Rds On (Max) @ Id, Vgs	12 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	14400pF @ 25V
Power - Max	500W
Packaging	Tube
Gate Charge (Qg) @ Vgs	380nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFE180N20 IXFE180N20

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IXFE180N20

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