IGBT Transistors 20 Amps 1200V
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V |
Collector-Emitter Saturation Voltage : | 2.4 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-247-3 |
Packaging : | Tube |
Symbol | Conditions | Maximum | Ratings |
VCES | TJ = 25 to 150 | 1200 | v |
VCGR | TJ = 25 to 150; RGE = 20K | 1200 | v |
VGES | Continuous | ±20 | V |
VGEM | Transient | ±30 | V |
IC25 | TC = 25, | 38 | A |
IC90 | TC = 90 | 25 | A |
ICM | TC = 25°C,tp= 1 ms | 50 | A |
RBSOA | VGE= 15 V, TVJ = 125, RG = 47 VCE = 0.8•VCES Clamped inductive load, L = 30 H |
ICM =35 VCEK < VCES |
A |
TSC (SCSOA) |
VGE = 15 V, VCES = 1200V, TJ = 125°C RG = 10 Ω non repetitive |
10 | µs |
PC | TC = 25IGBT Diode |
200 75 |
|
TJ | -55 ... +150 | ||
TJM | -55 ... +150 | ||
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 | ||
Md | Mounting torque | 0.8 - 1.2 | Nm |
Weight | TO-247 | 6 |
g |
Technical/Catalog Information | IXDH20N120D1 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 38A |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 20A |
Power - Max | 200W |
Mounting Type | Through Hole |
Package / Case | TO-247AD |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXDH20N120D1 IXDH20N120D1 |