IXDH20N120

IGBT Transistors 20 Amps 1200V

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SeekIC No. : 00143130 Detail

IXDH20N120: IGBT Transistors 20 Amps 1200V

floor Price/Ceiling Price

Part Number:
IXDH20N120
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 2.4 V Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C Package / Case : TO-247-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3
Collector-Emitter Saturation Voltage : 2.4 V


Features:

· NPT IGBT technology
· low saturation voltage
· low switching losses
· square RBSOA, no latch up
· high short circuit capability
· positive temperature coefficient for easy paralleling
· MOS input, voltage controlled
· optional ultra fast diode
· International standard package



Application

· AC motor speed control
· DC servo and robot drives
· DC choppers
· Uninteruptible power supplies (UPS)
· Switch-mode and resonant-mode power supplies



Specifications

Symbol Conditions Maximum Ratings
VCES TJ = 25 to 150 1200 v
VCGR TJ = 25 to 150; RGE = 20K 1200 v
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25, 38 A
IC90 TC = 90 25 A
ICM TC = 25°C,tp= 1 ms 50 A
RBSOA VGE= 15 V, TVJ = 125, RG = 47 VCE = 0.8•VCES
Clamped inductive load, L = 30 H
ICM =35
VCEK < VCES
A
TSC
(SCSOA)
VGE = 15 V, VCES = 1200V, TJ = 125°C
RG = 10 Ω non repetitive
10 µs
PC TC = 25IGBT
Diode
200
75
TJ   -55 ... +150
TJM   -55 ... +150
  Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
Md Mounting torque 0.8 - 1.2 Nm
Weight TO-247 6
g



Parameters:

Technical/Catalog InformationIXDH20N120
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)38A
Vce(on) (Max) @ Vge, Ic3V @ 15V, 20A
Power - Max200W
Mounting TypeThrough Hole
Package / CaseTO-247AD
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXDH20N120
IXDH20N120



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