IXDD415SI

Product :
Supply Voltage - Max :
Package / Case :
Supply Voltage - Min : 8 V
Mounting Style : SMD/SMT
Type : Low Side
Maximum Operating Temperature : + 85 C
Supply Current : 3 mA
Maximum Power Dissipation : 1000 mW
Packaging : Box
Rise Time : 4.5 ns
Fall Time : 3.5 ns


Features:

• Built using the advantages and compatibility of CMOS and IXYS HDMOS^TM processes
• Latch-Up Protected
• High Peak Output Current: Dual 15A Peak
• Wide Operating Range: 8V to 30V
• Rise And Fall Times of <3ns
• Minimum Pulse Width Of 6ns
• Ability to Disable Output under Faults
• High Capacitive Load Drive Capability: 4nF in <5ns
• Matched Rise And Fall Times
• 32ns Input To Output Delay Time
• Low Output Impedance
• Low Supply Current

Application

• Driving RF MOSFETs
• Class D or E Switching Amplifier Drivers
• Multi MHz Switch Mode Power Supplies (SMPS)
• Pulse Generators
• Acoustic Transducer Drivers
• Pulsed Laser Diode Drivers
• DC to DC Converters
• Pulse Transformer Driver


Pinout




Specifications

Parameter	Value
Supply Voltage	30V
All Other Pins	-0.3V to VCC + 0.3V
Power Dissipation TAMBIENT 25 TCASE 25	1W 12W
Derating Factors (to Ambient) 28-Pin SOIC	0.1W/
Storage Temperature	-65 to 150
Soldering Lead Temperature (10 seconds maximum)	300

Description

The IXDD415SI  is a dual CMOS high speed high current gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications, as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. Each output of the IXDD415SI  can source and sink 15A of peak current while producing voltage rise and fall times of less than 3ns. The outputs of the IXDD415SI  may be paralleled, producing a single output of up to 30A with comparable rise and fall times.

The input of the driver IXDD415SI  is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction/current shoot-through is virtually eliminated in the IXDD415. Its features and wide safety margin in operating voltage and power make the IXDD415 unmatched in performance and value.

The IXDD415SI  has two enable inputs, ENA and ENB. These enable inputs can be used to independently disable either of the outputs, OUTA or OUTB, for added flexibility. Additionally, the IXDD415 incorporates a unique ability to disable the output under fault conditions. When a logical low is forced into the Enable inputs, both final output stage MOSFETs (NMOS and PMOS) are turned off. As a result, the output of the IXDD415 enters a tristate mode and achieves a Soft Turn-Off of the MOSFET when a short circuit is detected. This helps prevent damage that could occur to the MOSFET if it were to be switched off abruptly due to a dv/dt over-voltage transient.

The IXDD415SI  is available in a 28 pin SO package (IXDD415SI), incorporating DEI's patented ⁽¹⁾ RF layout techniques to minimize stray lead inductances for optimum switching performance.

Parameters:

Technical/Catalog Information	IXDD415SI
Vendor	IXYS
Category	Integrated Circuits (ICs)
Configuration	Low-Side
Voltage - Supply	8 V ~ 30 V
Current - Peak	15A
Delay Time	32ns
Package / Case	28-SOIC
Packaging	Box
Number of Outputs	2
Input Type	Non-Inverting
Number of Configurations	2
Operating Temperature	-40°C ~ 85°C
High Side Voltage - Max (Bootstrap)	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXDD415SI IXDD415SI