IGBT Transistors
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1700 V |
Collector-Emitter Saturation Voltage : | 6 V | Maximum Gate Emitter Voltage : | 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-268-3 |
Packaging : | Tube |
Technical/Catalog Information | IXBT42N170A |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1700V |
Current - Collector (Ic) (Max) | 42A |
Vce(on) (Max) @ Vge, Ic | 6V @ 15V, 21A |
Power - Max | 350W |
Mounting Type | Surface Mount |
Package / Case | TO-268 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXBT42N170A IXBT42N170A IXBT42N170A ND IXBT42N170A ND IXBT42N170A |