IGBT Transistors 10 Amps 1700V 2.3 Rds
IXBT10N170: IGBT Transistors 10 Amps 1700V 2.3 Rds
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1700 V |
Collector-Emitter Saturation Voltage : | 2.3 V | Maximum Gate Emitter Voltage : | 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-268-3 |
Packaging : | Tube |
Technical/Catalog Information | IXBT10N170 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1700V |
Current - Collector (Ic) (Max) | 20A |
Vce(on) (Max) @ Vge, Ic | 3.8V @ 15V, 10A |
Power - Max | 140W |
Mounting Type | Surface Mount |
Package / Case | TO-268 |
Packaging | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXBT10N170 IXBT10N170 |