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IXBT10N170

IGBT Transistors 10 Amps 1700V 2.3 Rds

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SeekIC No. : 00143061 Detail

IXBT10N170: IGBT Transistors 10 Amps 1700V 2.3 Rds

IXBT10N170 Data Sheet

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Part Number:
IXBT10N170
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1700 V
Collector-Emitter Saturation Voltage : 2.3 V Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C Package / Case : TO-268-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.3 V
Collector- Emitter Voltage VCEO Max : 1700 V
Package / Case : TO-268-3


Features:

·High Blocking Voltage
·JEDEC TO-268 surface and JEDEC TO-247 AD
·Low conduction losses
·High current handling capability
·MOS Gate turn-on
- drive simplicity
·Molding epoxies meet UL 94 V-0 flammability classification


Application

·AC motor speed control
·Uninterruptible power supplies (UPS)
·Switched-mode and resonant-mode power supplies
·Capacitor discharge circuits


Parameters:

Technical/Catalog InformationIXBT10N170
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)20A
Vce(on) (Max) @ Vge, Ic3.8V @ 15V, 10A
Power - Max140W
Mounting TypeSurface Mount
Package / CaseTO-268
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXBT10N170
IXBT10N170



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