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IXBT42N170

IGBT Transistors BIMOSFET 1700V 75A

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SeekIC No. : 00143010 Detail

IXBT42N170: IGBT Transistors BIMOSFET 1700V 75A

IXBT42N170 Data Sheet

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Part Number:
IXBT42N170
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1700 V
Collector-Emitter Saturation Voltage : 2.3 V Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C Package / Case : TO-268-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.3 V
Collector- Emitter Voltage VCEO Max : 1700 V
Package / Case : TO-268-3


Features:

·High Blocking Voltage
·JEDEC TO-268 surface and JEDEC TO-247 AD
·Low conduction losses
·High current handling capability
·MOS Gate turn-on
  - drive simplicity
·Molding epoxies meet UL 94 V-0 flammability classification

 




Application

·AC motor speed control
·Uninterruptible power supplies (UPS)
·Switched-mode and resonant-mode power supplies
·Capacitor discharge circuits


Specifications

Symbol Conditions Maximum Ratings
VCES TJ = 25 to 150 1700 v
VCGR TJ = 25 to 150; RGE = 1 1700 v
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25, 75 A
IC90 TC = 90 42 A
ICM TC = 25°C, 1 ms 180 A
SSOA
(RBSOA)		 VGE= 15 V, TVJ = 125, RG = 47 VCE = 0.8•VCES
Clamped inductive load, L = 100 H		 ICM =90
VCES = 1350		 A
TSC
(SCSOA)		 VGE = 15 V, VCES = 1200V, TJ = 125°C
RG = 10 Ω non repetitive		 10 µs
PC TC = 25 360
TJ   -55 ... +150
TJM   150
Tstg   -55 ... +150
  Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s		 350
260
Md Mounting torque 1.13/10 Nm/lb.in.
Weight TO-247
TO-268		 6
4		 g
g



Parameters:

Technical/Catalog InformationIXBT42N170
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)80A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 42A
Power - Max360W
Mounting TypeSurface Mount
Package / CaseTO-268
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXBT42N170
IXBT42N170



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