IGBT Transistors 75 Amps 1700V 6.00 Rds
IXBN75N170A: IGBT Transistors 75 Amps 1700V 6.00 Rds
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1700 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | SOT-227B-4 | Packaging : | Tube |