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IXBN42N170A

IGBT Transistors 42 Amps 1700V 6.0 V Rds

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SeekIC No. : 00143020 Detail

IXBN42N170A: IGBT Transistors 42 Amps 1700V 6.0 V Rds

IXBN42N170A Data Sheet

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Part Number:
IXBN42N170A
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1700 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : SOT-227B-4 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1700 V
Package / Case : SOT-227B-4


Parameters:

Technical/Catalog InformationIXBN42N170A
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)75A
Vce(on) (Max) @ Vge, Ic3.6V @ 15V, 6A
Power - Max360W
Mounting TypeThrough Hole
Package / CaseTO-247AD
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXBN42N170A
IXBN42N170A



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