Features: • Ultra Low On-Resistance - rDS(ON) = 0.045, VGS = −4.5V -rDS(ON) = 0.048, VGS = −4.0V -rDS(ON) = 0.077, VGS = −2.5V• 2.5V Gate Drive Capability• Gate to Source Protection Diode• Simulation Models - Temperature Compensated PSPICE™ and SABER...
ITF87056DQT: Features: • Ultra Low On-Resistance - rDS(ON) = 0.045, VGS = −4.5V -rDS(ON) = 0.048, VGS = −4.0V -rDS(ON) = 0.077, VGS = −2.5V• 2.5V Gate Drive Capability• Gate t...
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Features: • Ultra Low On-Resistance - rDS(ON) = 0.025, VGS =10V - rDS(ON) = 0.034, VGS = 4.5...
Features: • Ultra Low On-Resistance - rDS(ON) = 0.012, VGS = 10V -rDS(ON) = 0.016, VGS = 4.5...
Features: • Ultra Low On-Resistance - rDS(ON) = 0.0078, VGS = −10V - rDS(ON) = 0.010, ...
ITF87056DQT | UNITS | ||
Drain to Source Voltage (Note 1) |
VDSS |
-20 |
V |
Drain to Gate Voltage (RGS = 20k) (Note 1) |
VDGR |
-20 |
V |
Gate to Source Voltage |
VGS |
±12 |
V |
Drain Current Continuous (TA = 25, VGS = -4.5V) (Note 2) Continuous (TA = 25, VGS = -4.0V) (Note 2) Continuous (TA = 100, VGS = -4.0V) (Note 2) Continuous (TA = 100, VGS = -2.5V) (Note 2) Pulsed Drain Current |
ID ID ID ID IDM |
|
A A A A A |
Power Dissipation (Note 2) Derate Above 25 |
PD |
2.0 16 |
W mW/ |
Operating and Storage Temperature |
TJ, TSTG |
-55 to 150 |
|
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Technical Brief TB370 |
TL Tpkg |
300 260 |
|
NOTES:
1. TJ = 25 to 125.
2. 62.5/W measured using FR-4 board with 0.50 in2 (322.6 mm2 ) copper pad at 1 second.
3. 230/W measured using FR-4 board with 0.0022 in2 (1.44 mm2) copper pad at 1000 seconds.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.