Features: • Ultra Low On-Resistance - rDS(ON) = 0.012, VGS = 10V -rDS(ON) = 0.016, VGS = 4.5V• Gate to Source Protection Diode• Simulation Models - Temperature Compensated PSPICE™ and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.intersil.com̶...
ITF86116SQT: Features: • Ultra Low On-Resistance - rDS(ON) = 0.012, VGS = 10V -rDS(ON) = 0.016, VGS = 4.5V• Gate to Source Protection Diode• Simulation Models - Temperature Compensated PSPICE...
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Features: • Ultra Low On-Resistance - rDS(ON) = 0.025, VGS =10V - rDS(ON) = 0.034, VGS = 4.5...
Features: • Ultra Low On-Resistance - rDS(ON) = 0.0078, VGS = −10V - rDS(ON) = 0.010, ...
Features: • Ultra Low On-Resistance - rDS(ON) = 0.012, VGS = 10V -rDS(ON) = 0.016, VGS =- 4....
ITF86116SQT | UNITS | ||
Drain to Source Voltage (Note 1) |
VDSS |
30 |
V |
Drain to Gate Voltage (RGS = 20k) (Note 1) |
VDGR |
30 |
V |
Gate to Source Voltage |
VGS |
±20 |
V |
Drain Current Continuous (TA = 25, VGS = 10V) (Figure 2) (Note 2) Continuous (TA = 25, VGS = 4.5V) (Note 2) Continuous (TA = 100, VGS = 4.5V) (Note 2) Pulsed Drain Current Pulsed Drain Current |
ID ID ID IDM |
|
A A A A |
Power Dissipation (Note 2) Derate Above 25 |
PD |
2 16 |
W mW/ |
Operating and Storage Temperature |
TJ, TSTG |
-55 to 150 |
|
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Technical Brief TB370 |
TL Tpkg |
300 260 |
|