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ITF86116SQT

Features: • Ultra Low On-Resistance - rDS(ON) = 0.012, VGS = 10V -rDS(ON) = 0.016, VGS = 4.5V• Gate to Source Protection Diode• Simulation Models - Temperature Compensated PSPICE™ and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.intersil.com̶...

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SeekIC No. : 004381331 Detail

ITF86116SQT: Features: • Ultra Low On-Resistance - rDS(ON) = 0.012, VGS = 10V -rDS(ON) = 0.016, VGS = 4.5V• Gate to Source Protection Diode• Simulation Models - Temperature Compensated PSPICE&#...

ITF86116SQT Data Sheet

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Part Number:
ITF86116SQT
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Ultra Low On-Resistance
   - rDS(ON) = 0.012, VGS = 10V
   - rDS(ON) = 0.016, VGS = 4.5V
• Gate to Source Protection Diode
• Simulation Models
   - Temperature Compensated PSPICE™ and SABER Electrical Models
  - Spice and SABER Thermal Impedance Models
   - www.intersil.com
• Peak Current vs Pulse Width Curve
• Transient Thermal Impedance Curve vs Board Mounting Area
• Switching Time vs RGS Curves


Specifications

    ITF86116SQT UNITS
Drain to Source Voltage (Note 1)
VDSS
30
V
Drain to Gate Voltage (RGS = 20k) (Note 1)
VDGR
30
V
Gate to Source Voltage
VGS
±20
V
Drain Current
Continuous (TA = 25, VGS = 10V) (Figure 2) (Note 2)
Continuous (TA = 25, VGS = 4.5V) (Note 2)
Continuous (TA = 100, VGS = 4.5V) (Note 2)
Pulsed Drain Current
Pulsed Drain Current

ID
ID
ID
IDM


10.0
9.0
5.0
Figure 4

A
A
A
A
Power Dissipation (Note 2)
Derate Above 25
PD
2
16
W
mW/
Operating and Storage Temperature
TJ, TSTG
-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Technical Brief TB370

TL
Tpkg

300
260


NOTES:
1. TJ = 25 to 125.
2. 62.5/W measured using FR-4 board with 1.00 in2 (645.2 mm2) copper pad at 10 second.

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.


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