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ITA10B3

Features: ` HIGH SURGE CAPABILITY TRANSIL ARRAY IPP = 40 A (8/20s)` PEAK PULSE POWER : 300 W (8/20s)` SEPARATED INPUT-OUTPUT` UPTO9 BIDIRECTIONAL TRANSIL FUNCTIONS` LOW CLAMPING FACTOR (VCL / VBR) AT HIGH CURRENT LEVEL` LOW LEAKAGE CURRENT` ESD PROTECTION UP TO 15kVApplicationDifferential data tra...

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SeekIC No. : 004381316 Detail

ITA10B3: Features: ` HIGH SURGE CAPABILITY TRANSIL ARRAY IPP = 40 A (8/20s)` PEAK PULSE POWER : 300 W (8/20s)` SEPARATED INPUT-OUTPUT` UPTO9 BIDIRECTIONAL TRANSIL FUNCTIONS` LOW CLAMPING FACTOR (VCL / VBR) A...

ITA10B3 Data Sheet

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Part Number:
ITA10B3
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/2/15

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Product Details

Description



Features:

` HIGH SURGE CAPABILITY TRANSIL ARRAY
  IPP = 40 A (8/20s)
` PEAK PULSE POWER : 300 W (8/20s)
` SEPARATED INPUT-OUTPUT
` UPTO9 BIDIRECTIONAL TRANSIL FUNCTIONS
` LOW CLAMPING FACTOR (VCL / VBR) AT HIGH
  CURRENT LEVEL
` LOW LEAKAGE CURRENT
` ESD PROTECTION UP TO 15kV


Application

Differential data transmission lines protection :
- RS-232
- RS-423
- RS-422
- RS-485


Specifications

Symbol Parameter Value Unit
PPP Peak pulse power dissipation (8/20s)
(see note 1)		 Tj initial = Tamb 300 W
IPP Peak pulse current (8/20s) (see note 1) Tj initial = Tamb 40 A
I2t Wire I2t value (see note 1) 0.6 A2s
Tstg
Tj		 Storage temperature range
Maximum operating junction temperature		 - 55 to + 150
125		 °C
°C
TL Maximum lead temperature for soldering during 10s 260 °C



Description

Transil diode arrays ITA10B3 provide high overvoltage protection by clamping action. Their instantaneous ITA10B3 response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC's.

The ITA series ITA10B3 allies high surge capability against energetic pulses with high voltage performance against ESD.

The separated input/output configuration of the ITA10B3 ensures improved protection against very fast transient overvoltage like ESD by elimination of the spikes induced by parasitic inductances created by external wiring.




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