Features: • Incorporates two chips of 30V/1A and 30V/200mA, respectively.• Miniature package makes this IC ideal for miniaturization of electronic devices and high-density mounting.Application• Battery charger circuit for portable electronic devicesSpecifications InternalD...
ISB-A40-0: Features: • Incorporates two chips of 30V/1A and 30V/200mA, respectively.• Miniature package makes this IC ideal for miniaturization of electronic devices and high-density mounting.Appli...
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Internal Device |
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
D1, D2 |
Repetitive peak reverse voltage |
VRRM |
30 |
V | |
Average output current |
IO |
1.0 |
A | ||
D3, D4 |
Repetitive peak reverse voltage |
VRRM |
30 |
V | |
Average output current |
IO |
200 |
mA | ||
Allowable power dissipation |
PD-D1, 2 |
* |
0.55 |
W | |
PD-D3, 4 |
* |
0.4 |
W | ||
Storage ambient temperature |
Tstg |
-40 to +125 |
°C |
The ISB-A40-0 incorporates four chips of schottky barrier diodes that are necessary for preventing reverse-current flow in charger circuits. This IC is optimal for high-density mounting and miniaturization of electronic products.