Features: • Includes 4 identical N-channel MOSFET devices in a single package.• 1.6 mm×1.6 mm×0.75 mm ultrathin, miniature package.• 2.5V drive capability.Specifications Parameter Symbol Conditions Ratings Unit Drain-to-source voltage VDSS Common to TR1, TR2, TR3, a...
ISB-A27-0: Features: • Includes 4 identical N-channel MOSFET devices in a single package.• 1.6 mm×1.6 mm×0.75 mm ultrathin, miniature package.• 2.5V drive capability.Specifications Param...
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Parameter | Symbol | Conditions | Ratings | Unit |
Drain-to-source voltage | VDSS | Common to TR1, TR2, TR3, and TR4 | 30 | V |
Gate-to-Source Voltage | VGSS | ±10 | V | |
Drain current | ID | 0.15 | A | |
Allowable power dissipation | Pd max | When mounted on a specified board * | 0.33 | W |
Operating ambient temperature | Topr | -30 to +85 | ||
Storage ambient temperature | Tstg | -40 to +125 |
The ISB-A27-0 is a SANYO'S original SIP (System In Package) IC that includes four N-channel MOSFET devices.
They are mounted into one thin-and-small package by utilizing SANYO's high-density mounting technology, "Integrated System in Board (ISB)".
The advantage using its ultrathin miniature package makes the ISB-A27-0 ideal for switching devices in small, owpower circuits for cell phones and other portable equipment. It achieves significant reduction in the component mounting area compared to discrete device implementations (approx 25% smaller than ECSP package).