Features: • High-speed access times:8, 10, 12 ns• High-performance, low-power CMOS process• Multiple center power and ground pins for greater noise immunity• Easy memory expansion with CE andOE options•CE power-down• Fully static operation: no clock or refresh r...
IS63LV1024L: Features: • High-speed access times:8, 10, 12 ns• High-performance, low-power CMOS process• Multiple center power and ground pins for greater noise immunity• Easy memory expa...
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Features: • High-speed access times: 8, 10, 12 and 15 ns• High-performance, low-power ...
Symbol | Parameter | Value | Unit |
VTERM | Terminal Voltage with Respect to GND | 0.5 to Vcc + 0.5 | V |
TBIAS | Temperature Under Bias | 55 to +125 | |
TSTG | Storage Temperature | 65 to +150 | |
PT | Power Dissipation | 1.0 | W |
The ISSI IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024L is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 W (typical) with CMOS input levels.
The IS63LV1024L operates from a single 3.3V power supply and all inputs are TTL-compatible.